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| APM2314 N-Channel Enhancement Mode MOSFET Features * * * * 20V/2.8A , RDS(ON)=45m(typ.) @ VGS=4.5V RDS(ON)=55m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package Pin Description D G S Top View of SOT-23 Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G D Ordering and Marking Information A P M 23 14 H andling C ode T em p. R an ge Package Code S N-Channel MOSFET Package Code A : S O T -23 O perating Junction T em p. R ange C : -55 to 1 50 C H andling C ode T R : T ape & R eel A P M 2314 A : M 14X X - D ate C ode Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating 20 10 2.8 10 Unit V A Maximum Drain Current - Continuous Maximum Drain Current - Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t 10 sec. APM2314 Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TA=25C TA=100C TJ TSTG RjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient (TA = 25C unless otherwise noted) Rating 1.25 0.5 150 -55 to 150 100 Unit W C C C/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa Dynamic Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss b (TA = 25C unless otherwise noted) APM2314 Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance VGS=0V , IDS=250A VDS=16V , VGS=0V VDS=VGS , IDS=250A VGS=10V , VDS=0V VGS=4.5V , IDS=1.2A VGS=2.5V , IDS=0.8A ISD=0.5A , VGS=0V VDS=10V , IDS= 3A VGS=4.5V VDD=10V , IDS=1A, VGEN=4.5V , RG=6, RL=10 VGS=0V 20 1 0.5 0.7 45 55 0.75 6.5 0.9 0.9 6 5 16 6 435 120 65 15 11 30 15 1 100 60 80 1.3 9 V A V nA m V nC ns VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 2 www.anpec.com.tw APM2314 Typical Characteristics Output Characteristics 10 VGS=2,3,4,5,6,7,8,9,10V Transfer Characteristics 10 8 8 ID-Drain Current (A) 6 ID-Drain Current (A) 6 4 4 TJ=125C TJ=-55C 2 VGS=1V 2 TJ=25C 0 0 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.75 IDS=250A On-Resistance vs. Drain Current 0.09 0.08 VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance () 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 1 2 3 4 5 6 7 8 VGS=4.5V VGS=2.5V Tj - Junction Temperature (C) ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 3 www.anpec.com.tw APM2314 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.070 ID=1.2A On-Resistance vs. Junction Temperature 2.5 VGS=4.5V ID=1.2A RDS(ON)-On-Resistance () RDS(ON)-On-Resistance () (Normalized) 0.065 0.060 0.055 0.050 0.045 0.040 0.035 0.030 1 2 3 4 5 6 7 8 9 10 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 5 600 VDS=10V ID=3A Capacitance Frequency=1MHz Ciss VGS-Gate-Source Voltage (V) 4 500 Capacitance (pF) 400 300 200 Coss 3 2 1 100 0 Crss 0 0 1 2 3 4 5 6 7 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 4 www.anpec.com.tw APM2314 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 10 Single Pulse Power 14 12 IS-Source Current (A) 10 1 TJ=150C TJ=25C Power (W) 1.2 1.4 1.6 8 6 4 0.1 0.0 0.2 0.4 0.6 0.8 1.0 2 0 0.01 0.1 1 10 100 500 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100C/W 3.TJM-TA=PDMZthJA D=0.01 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 500 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 5 www.anpec.com.tw APM2314 Packaging Information SOT-23 D B 3 E 1 2 H S e A A1 L C Dim A A1 B C D E e H L M illim et er s M in. 1. 0 0 0. 0 0 0. 3 5 0. 1 0 2. 7 0 1. 4 0 1. 9 0 B SC 2. 4 0 0. 3 7 3. 0 0 0. 0 94 0. 0 01 5 M ax. 1. 3 0 0. 1 0 0. 5 1 0. 2 5 3. 1 0 1. 8 0 M in. 0. 0 39 0. 0 00 0. 0 14 0. 0 04 0. 1 06 0. 0 55 Inc he s M ax. 0. 0 51 0. 0 04 0. 0 20 0. 0 10 0. 1 22 0. 0 71 0. 0 75 B SC 0. 11 8 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 6 www.anpec.com.tw APM2314 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 7 APM2314 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape Po E P P1 D t F W Bo Ao Ko D1 T2 J C A B T1 Application A 1781 B 72 1.0 D 1.5 +0.1 C J T1 8.4 2 P1 T2 1.5 0.3 Ao 13.0 + 0.2 2.5 0.15 D1 1.5 +0.1 Po 4.0 0.1 W 8.0+ 0.3 - 0.3 Bo 3.2 0.1 P 4 0.1 Ko 1.4 0.1 E 1.75 0.1 t 0.20.03 SOT-23 F 3.5 0.05 2.0 0.1 3.15 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 8 www.anpec.com.tw APM2314 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 9 www.anpec.com.tw |
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